Hypertec 4GB PC2100 Kit (Legacy) memory module 4 x 1 GB DDR 266 MHz

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Description

Hypertec 4GB PC2100 Kit (Legacy) memory module 4 x 1 GB DDR 266 MHzA Hypertec Legacy Memory Module is a module that uses no current DRAM technology and is no longer in mainstream production by OEMS and or third party suppliers. Hypertec are committed to providing a full memory upgrade landscape as part of our core product offering and as such, there may be occasions where we need to utilise professionally repurposed components. Any repurposed components are removed within a full ESD environment and then used to

1 V Memory ranking 2 ECC No Memory clock speed 5600 MHz Internal memory type DDR5 Weight & dimensions Package width 10 mm Package depth 150 mm Package height 55 mm Package weight 30 g Packaging data Package width 10 mm Package depth 150 mm Package height 55 mm Package weight 30 g Other features Chips organisation 2Rx8

2 V Memory ranking 2 ECC No Memory clock speed 2933 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 32 GB Internal memory 32 GB Component for PC Memory form factor 288-pin DIMM CAS latency 21 Memory voltage 1

or handling large datasets

Memory Buffered memory type Unregistered (unbuffered) Internal memory 2 GB Memory form factor 240-pin DIMM Memory ranking 1 ECC Yes Memory clock speed 1066 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 2 GB Memory form factor 240-pin DIMM Memory ranking 1 ECC Yes Memory clock speed 1066 MHz Internal memory type DDR3

Memory Internal memory 4 GB ECC Yes Memory clock speed 1600 MHz Features Internal memory 4 GB ECC Yes Memory clock speed 1600 MHz

35 V ECC No Memory clock speed 1333 MHz Internal memory type DDR3

35 V Design Cooling type Heatsink Technical details Cooling type Heatsink Memory Buffered memory type Registered (buffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for PC/server Memory form factor 240-pin DIMM CAS latency 11 Memory voltage 1

A Toshiba equivalent 8GB Low Voltage SODIMM (PC3-12800)

35 V Memory Buffered memory type Registered (buffered) Internal memory 32 GB Memory form factor 240-pin DIMM Memory voltage 1

Memory Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 240-pin DIMM Memory ranking 2 ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3L Features Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 240-pin DIMM Memory ranking 2 ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3L

An IBM/Lenovo equivalent 2GB ECC DIMM

1 V Memory ranking 1 ECC No Memory clock speed 4800 MHz Internal memory type DDR5 Weight & dimensions Package width 10 mm Package depth 150 mm Package height 55 mm Package weight 30 g Packaging data Package width 10 mm Package depth 150 mm Package height 55 mm Package weight 30 g Other features Chips organisation 1Rx8

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